Low-cost and high-gain silicide Schottky-barrier collector phototransistor integrated on Si waveguide for infrared detection
Shiyang Zhu, G. Q. Lo, M. B. Yu, and D. L. Kwong
A two-terminal silicide Schottky-barrier collector phototransistor (SBCPT) integrated on a silicon-on-insulator waveguide was proposed and demonstrated using low-cost standard silicon processing technology. Owing to the current gain through the transistor action, the SBCPT at 5 V bias achieves a res ... [Appl. Phys. Lett. 93, 071108 (2008)] published Fri Aug 22, 2008.
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A two-terminal silicide Schottky-barrier collector phototransistor (SBCPT) integrated on a silicon-on-insulator waveguide was proposed and demonstrated using low-cost standard silicon processing technology. Owing to the current gain through the transistor action, the SBCPT at 5 V bias achieves a res ... [Appl. Phys. Lett. 93, 071108 (2008)] published Fri Aug 22, 2008.
Read full Article »
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