Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates
Yun Zhang, Shyh-Chiang Shen, Hee Jin Kim, Suk Choi, Jae-Hyun Ryou et al.
We report low-noise GaN visible-blind homojunction p-i-n photodiodes. The devices are grown on a freestanding bulk GaN substrate and are fabricated using a ledged surface depletion technique to suppress the mesa sidewall leakage. For an 80-[mu]m-diameter photodetector, the dark current density is lo ... [Appl. Phys. Lett. 94, 221109 (2009)] published Thu Jun 4, 2009.
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We report low-noise GaN visible-blind homojunction p-i-n photodiodes. The devices are grown on a freestanding bulk GaN substrate and are fabricated using a ledged surface depletion technique to suppress the mesa sidewall leakage. For an 80-[mu]m-diameter photodetector, the dark current density is lo ... [Appl. Phys. Lett. 94, 221109 (2009)] published Thu Jun 4, 2009.
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