Metal-semiconductor-metal Ge photodetectors integrated in silicon waveguides
Laurent Vivien, Delphine Marris-Morini, Jean-Marc Fedeli, Mathieu Rouviere, Jean-Francois Damlencourt et al.
Metal-semiconductor-metal (MSM) Ge photodetectors integrated in silicon-on-insulator waveguides using butt coupling configuration have been experimentally demonstrated. Bandwidths reach 28 GHz under 6 V bias at wavelengths of 1.31 and 1.55 [mu]m for a photodetector with 1 [mu]m electrode spacing ... [Appl. Phys. Lett. 92, 151114 (2008)] published Fri Apr 18, 2008.
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Metal-semiconductor-metal (MSM) Ge photodetectors integrated in silicon-on-insulator waveguides using butt coupling configuration have been experimentally demonstrated. Bandwidths reach 28 GHz under 6 V bias at wavelengths of 1.31 and 1.55 [mu]m for a photodetector with 1 [mu]m electrode spacing ... [Appl. Phys. Lett. 92, 151114 (2008)] published Fri Apr 18, 2008.
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