Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes
N. B. Cook and A. Krier
InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 [mu]m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emissio ... [Appl. Phys. Lett. 95, 021110 (2009)] published Thu Jul 16, 2009.
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InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 [mu]m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emissio ... [Appl. Phys. Lett. 95, 021110 (2009)] published Thu Jul 16, 2009.
Read full Article »
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