Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode
Koushik Banerjee, Siddhartha Ghosh, Shubhrangshu Mallick, Elena Plis, Sanjay Krishna et al.
Midwavelength infrared InAsGaSb strained layer superlattice n-n-p avalanche photodiodes, specifically designed to have hole dominated avalanching, with a zero percent cutoff wavelength of ~6.3 [mu]m are fabricated and characterized. Maximum multiplication gain of 105 is measured at 3.6 V at 77 K. M ... [Appl. Phys. Lett. 94, 201107 (2009)] published Wed May 20, 2009.
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Midwavelength infrared InAsGaSb strained layer superlattice n-n-p avalanche photodiodes, specifically designed to have hole dominated avalanching, with a zero percent cutoff wavelength of ~6.3 [mu]m are fabricated and characterized. Maximum multiplication gain of 105 is measured at 3.6 V at 77 K. M ... [Appl. Phys. Lett. 94, 201107 (2009)] published Wed May 20, 2009.
Read full Article »
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