Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications
Shiyang Zhu, M. B. Yu, G. Q. Lo, and D. L. Kwong
Integrated silicon-on-insulator waveguide-based silicide Schottky-barrier photodetectors were fabricated using low-cost standard Si complementary metal-oxide-semiconductor processing technology. The thin epitaxial NiSi layer formed by solid-state Ti-interlayer mediated epitaxy on the top of Si-waveg ... [Appl. Phys. Lett. 92, 081103 (2008)] published Mon Feb 25, 2008.
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Integrated silicon-on-insulator waveguide-based silicide Schottky-barrier photodetectors were fabricated using low-cost standard Si complementary metal-oxide-semiconductor processing technology. The thin epitaxial NiSi layer formed by solid-state Ti-interlayer mediated epitaxy on the top of Si-waveg ... [Appl. Phys. Lett. 92, 081103 (2008)] published Mon Feb 25, 2008.
Read full Article »
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