Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365–500 nm spectral range
E. A. Berkman, N. A. El-Masry, A. Emara, and S. M. Bedair
We report on nearly lattice-matched grown InGaN based p-i-n photodiodes detecting in the 365500 nm range with tunable peak responsivity tailored by the i-layer properties. The growth of lattice matched i- and n-InGaN layer leads to improvement in the device performance. This approach produced photo ... [Appl. Phys. Lett. 92, 101118 (2008)] published Thu Mar 13, 2008.
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We report on nearly lattice-matched grown InGaN based p-i-n photodiodes detecting in the 365500 nm range with tunable peak responsivity tailored by the i-layer properties. The growth of lattice matched i- and n-InGaN layer leads to improvement in the device performance. This approach produced photo ... [Appl. Phys. Lett. 92, 101118 (2008)] published Thu Mar 13, 2008.
Read full Article »
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