On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
Jinqiao Xie, Xianfeng Ni, Qian Fan, Ryoko Shimada, Umit Ozgur et al.
Multiple quantum well (MQW) InGaN light emitting diodes with and without electron blocking layers, with relatively small and large barriers, with and without p-type doping in the MQW region emitting at ~420 nm were used to determine the genesis of efficiency droop observed at injection levels of ap ... [Appl. Phys. Lett. 93, 121107 (2008)] published Tue Sep 23, 2008.
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Multiple quantum well (MQW) InGaN light emitting diodes with and without electron blocking layers, with relatively small and large barriers, with and without p-type doping in the MQW region emitting at ~420 nm were used to determine the genesis of efficiency droop observed at injection levels of ap ... [Appl. Phys. Lett. 93, 121107 (2008)] published Tue Sep 23, 2008.
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