Optical gain in InGaN/InGaAlN quantum well structures with zero internal field
Seoung-Hwan Park, Doyeol Ahn, and Jong-Wook Kim
Electronic and optical properties of InGaN/InAlGaN quantum well with zero internal field were investigated by using the non-Markovian gain model with many-body effects. The In composition x in the well to give zero internal field is shown to increase with the In composition y in the barrier. The InG ... [Appl. Phys. Lett. 92, 171115 (2008)] published Fri May 2, 2008.
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Electronic and optical properties of InGaN/InAlGaN quantum well with zero internal field were investigated by using the non-Markovian gain model with many-body effects. The In composition x in the well to give zero internal field is shown to increase with the In composition y in the barrier. The InG ... [Appl. Phys. Lett. 92, 171115 (2008)] published Fri May 2, 2008.
Read full Article »
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