Optical polarization characteristics of InGaN/GaN light-emitting diodes fabricated on GaN substrates oriented between (10[overline 1]0) and (10[overline 1][overline 1]) planes
Hisashi Masui, Hisashi Yamada, Kenji Iso, Shuji Nakamura, and Steven P. DenBaars
Optical polarization characteristics of InGaN/GaN light-emitting diodes (LEDs) were studied. Light-emitting diode samples were fabricated on four types of GaN substrates near (10[overline 1]0) orientation with intentional off-axis cuts of 0 degrees , 5 degrees , 10 degrees , and 27 degrees towards ... [Appl. Phys. Lett. 92, 091105 (2008)] published Tue Mar 4, 2008.
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Optical polarization characteristics of InGaN/GaN light-emitting diodes (LEDs) were studied. Light-emitting diode samples were fabricated on four types of GaN substrates near (10[overline 1]0) orientation with intentional off-axis cuts of 0 degrees , 5 degrees , 10 degrees , and 27 degrees towards ... [Appl. Phys. Lett. 92, 091105 (2008)] published Tue Mar 4, 2008.
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