Optical properties of yellow light-emitting diodes grown on semipolar (11[overline 2]2) bulk GaN substrates
Hitoshi Sato, Roy B. Chung, Hirohiko Hirasawa, Natalie Fellows, Hisashi Masui et al.
We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended defect density semipolar (11[overline 2]2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum ... [Appl. Phys. Lett. 92, 221110 (2008)] published Thu Jun 5, 2008.
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We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended defect density semipolar (11[overline 2]2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum ... [Appl. Phys. Lett. 92, 221110 (2008)] published Thu Jun 5, 2008.
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