Optically induced transport properties of freely suspended semiconductor submicron channels

C. Rossler, K.-D. Hof, S. Manus, S. Ludwig, J. P. Kotthaus et al.
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas. The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of pho ... [Appl. Phys. Lett. 93, 071107 (2008)] published Wed Aug 20, 2008.
Read full Article »

Leave a Reply

*
To prove that you're not a bot, enter this code
Anti-Spam Image