Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type delta-doping
C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi
High quality delta-doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with delta-doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with delta-doped p-GaN also achieve ... [Appl. Phys. Lett. 92, 241103 (2008)] published Tue Jun 17, 2008.
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High quality delta-doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with delta-doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with delta-doped p-GaN also achieve ... [Appl. Phys. Lett. 92, 241103 (2008)] published Tue Jun 17, 2008.
Read full Article »
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