Photodiode characteristics and band alignment parameters of epitaxial Al[sub 0.5]Ga[sub 0.5]P
An Chen and Jerry M. Woodall
Wide-bandgap semiconductor AlGaP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on AlGaP epitaxial layer grown lattice matched on GaP substrate by molecular beam epitaxy. Although quantum efficiency is low for standard p-i-n photodiode du ... [Appl. Phys. Lett. 94, 021102 (2009)] published Mon Jan 12, 2009.
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Wide-bandgap semiconductor AlGaP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on AlGaP epitaxial layer grown lattice matched on GaP substrate by molecular beam epitaxy. Although quantum efficiency is low for standard p-i-n photodiode du ... [Appl. Phys. Lett. 94, 021102 (2009)] published Mon Jan 12, 2009.
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