Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates
Y. Yang, X. A. Cao, and C. H. Yan
InGaN/GaN multiple-quantum-well green light-emitting diodes (LEDs) were grown on freestanding GaN and sapphire substrates. The density of microstructural defects in the LED on GaN was substantially reduced, leading to a significant reduction in defect-assisted tunneling currents and an improved inje ... [Appl. Phys. Lett. 94, 041117 (2009)] published Thu Jan 29, 2009.
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InGaN/GaN multiple-quantum-well green light-emitting diodes (LEDs) were grown on freestanding GaN and sapphire substrates. The density of microstructural defects in the LED on GaN was substantially reduced, leading to a significant reduction in defect-assisted tunneling currents and an improved inje ... [Appl. Phys. Lett. 94, 041117 (2009)] published Thu Jan 29, 2009.
Read full Article »
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