Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
Xianfeng Ni, Qian Fan, Ryoko Shimada, Umit Ozgur, and Hadis Morkoc
Light emitting diodes (LEDs) based on InGaN suffer from efficiency droop at current injection levels as low as 50 A cm. We investigated multiple quantum well InGaN LEDs with varying InGaN barrier thicknesses (312 nm) emitting at ~400410 nm to investigate the effect of hole mass and also to find ou ... [Appl. Phys. Lett. 93, 171113 (2008)] published Fri Oct 31, 2008.
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Light emitting diodes (LEDs) based on InGaN suffer from efficiency droop at current injection levels as low as 50 A cm. We investigated multiple quantum well InGaN LEDs with varying InGaN barrier thicknesses (312 nm) emitting at ~400410 nm to investigate the effect of hole mass and also to find ou ... [Appl. Phys. Lett. 93, 171113 (2008)] published Fri Oct 31, 2008.
Read full Article »
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