Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer
Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, and Fumio Koyama
Emission and shape characteristics of the InGaAs covered InAs quantum dots with GaNAs strain compensation layers (SCLs) are investigated, focusing on the reduction of the spacer thickness for device applications. Using the GaNAs SCL, the suppression of inhomogeneous emission broadening induced by th ... [Appl. Phys. Lett. 92, 141110 (2008)] published Wed Apr 9, 2008.
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Emission and shape characteristics of the InGaAs covered InAs quantum dots with GaNAs strain compensation layers (SCLs) are investigated, focusing on the reduction of the spacer thickness for device applications. Using the GaNAs SCL, the suppression of inhomogeneous emission broadening induced by th ... [Appl. Phys. Lett. 92, 141110 (2008)] published Wed Apr 9, 2008.
Read full Article »
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