Room temperature operated 3.1 mu m type-I GaSb-based diode lasers with 80 mW continuous-wave output power
L. Shterengas, G. Belenky, G. Kipshidze, and T. Hosoda
High-power diode lasers with heavily strained In(Al)GaAsSb type-I quantum-well active regions emitting at 3.1 [mu]m at room temperature are reported. The devices produce continuous-wave output powers above 200 mW at 250 K and 80 mW at 285 K. ... [Appl. Phys. Lett. 92, 171111 (2008)] published Thu May 1, 2008.
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High-power diode lasers with heavily strained In(Al)GaAsSb type-I quantum-well active regions emitting at 3.1 [mu]m at room temperature are reported. The devices produce continuous-wave output powers above 200 mW at 250 K and 80 mW at 285 K. ... [Appl. Phys. Lett. 92, 171111 (2008)] published Thu May 1, 2008.
Read full Article »
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