Shape-engineered epitaxial InGaAs quantum rods for laser applications
L. H. Li, P. Ridha, G. Patriarche, N. Chauvin, and A. Fiore
We apply artificial shape engineering of epitaxial semiconductor nanostructures to demonstrate InGaAs quantum rods (QRs), nanocandles, and quantum dots-in-rods on a GaAs substrate. The evolution of the QRs from a zero-dimensional to one-dimensional confinement is evidenced by systematically measurin ... [Appl. Phys. Lett. 92, 121102 (2008)] published Mon Mar 24, 2008.
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We apply artificial shape engineering of epitaxial semiconductor nanostructures to demonstrate InGaAs quantum rods (QRs), nanocandles, and quantum dots-in-rods on a GaAs substrate. The evolution of the QRs from a zero-dimensional to one-dimensional confinement is evidenced by systematically measurin ... [Appl. Phys. Lett. 92, 121102 (2008)] published Mon Mar 24, 2008.
Read full Article »
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