Silicon light emitting diodes emitting over the 1.2–1.4 mu m wavelength region in the extended optical communication band
M. A. Lourenco, R. M. Gwilliam, and K. P. Homewood
Here, we demonstrate bulk silicon light emitting diodes operating over the 1.21.35 [mu]m range. This is achieved by the implantation of the rare earth thulium, incorporated in the trivalent Tm state, into silicon p-n junctions. Light emitting diodes operating under forward bias have been obtained b ... [Appl. Phys. Lett. 92, 161108 (2008)] published Tue Apr 22, 2008.
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Here, we demonstrate bulk silicon light emitting diodes operating over the 1.21.35 [mu]m range. This is achieved by the implantation of the rare earth thulium, incorporated in the trivalent Tm state, into silicon p-n junctions. Light emitting diodes operating under forward bias have been obtained b ... [Appl. Phys. Lett. 92, 161108 (2008)] published Tue Apr 22, 2008.
Read full Article »
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