Silver-clad nitride semiconductor laser diode
David Bour, Christopher Chua, Zhihong Yang, Mark Teepe, and Noble Johnson
An edge-emitting laser diode is described in which the epitaxial upper cladding layer is replaced with a metal contact selected for its optical as well as electrical properties. The structure is demonstrated with an InGaN multiple-quantum-well laser diode operating at 412 nm with silver rather than ... [Appl. Phys. Lett. 94, 041124 (2009)] published Fri Jan 30, 2009.
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An edge-emitting laser diode is described in which the epitaxial upper cladding layer is replaced with a metal contact selected for its optical as well as electrical properties. The structure is demonstrated with an InGaN multiple-quantum-well laser diode operating at 412 nm with silver rather than ... [Appl. Phys. Lett. 94, 041124 (2009)] published Fri Jan 30, 2009.
Read full Article »
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