Stimulated emission and lasing from an Al[sub 0.13]Ga[sub 0.87]N/GaN double heterostructure grown on a silicon substrate
F. S. Al-Ajmi, R. M. Kolbas, J. C. Roberts, P. Rajagopal, J. W. Cook, Jr. et al.
Stimulated emission and laser action with well developed longitudinal optical modes from an AlGaN/GaN double heterostructure with a 25 nm GaN active layer grown on a silicon substrate by metal-organic chemical vapor deposition is demonstrated. Lasing was observed from cleaved platelets at room temp ... [Appl. Phys. Lett. 92, 021118 (2008)] published Thu Jan 17, 2008.
Read full Article »
Stimulated emission and laser action with well developed longitudinal optical modes from an AlGaN/GaN double heterostructure with a 25 nm GaN active layer grown on a silicon substrate by metal-organic chemical vapor deposition is demonstrated. Lasing was observed from cleaved platelets at room temp ... [Appl. Phys. Lett. 92, 021118 (2008)] published Thu Jan 17, 2008.
Read full Article »
Leave a Reply