Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers
A. Lemaitre, A. Miard, L. Travers, O. Mauguin, L. Largeau et al.
A small fraction of phosphorus (up to 10%) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the ... [Appl. Phys. Lett. 93, 021123 (2008)] published Fri Jul 18, 2008.
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A small fraction of phosphorus (up to 10%) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the ... [Appl. Phys. Lett. 93, 021123 (2008)] published Fri Jul 18, 2008.
Read full Article »
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