Study of residual background carriers in midinfrared InAs/GaSb superlattices for uncooled detector operation
H. J. Haugan, S. Elhamri, F. Szmulowicz, B. Ullrich, G. J. Brown et al.
The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430 degrees C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 10 cm, and ... [Appl. Phys. Lett. 92, 071102 (2008)] published Tue Feb 19, 2008.
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The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430 degrees C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 10 cm, and ... [Appl. Phys. Lett. 92, 071102 (2008)] published Tue Feb 19, 2008.
Read full Article »
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