Temperature insensitive linewidth enhancement factor of p-type doped InAs/GaAs quantum-dot lasers emitting at 1.3 mu m
D.-Y. Cong, A. Martinez, K. Merghem, A. Ramdane, J.-G. Provost et al.
The temperature dependence of microwave propertiesrelaxation frequency and Henry factorof undoped and p-type doped ten InAs/GaAs quantum-dot layer lasers is reported in the 2080 degrees C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitiv ... [Appl. Phys. Lett. 92, 191109 (2008)] published Thu May 15, 2008.
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The temperature dependence of microwave propertiesrelaxation frequency and Henry factorof undoped and p-type doped ten InAs/GaAs quantum-dot layer lasers is reported in the 2080 degrees C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitiv ... [Appl. Phys. Lett. 92, 191109 (2008)] published Thu May 15, 2008.
Read full Article »
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