Terahertz Raman laser based on silicon doped with phosphorus
S. G. Pavlov, H.-W. Hubers, U. Bottger, R. Kh. Zhukavin, V. N. Shastin et al.
Raman-type stimulated emission at frequencies between 5.0 and 5.2 THz as well as between 6.1 and 6.4 THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5 K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. T ... [Appl. Phys. Lett. 92, 091111 (2008)] published Tue Mar 4, 2008.
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Raman-type stimulated emission at frequencies between 5.0 and 5.2 THz as well as between 6.1 and 6.4 THz has been realized in silicon crystals doped by phosphorus donors. The Raman laser operates at around 5 K under optical excitation by a pulsed, frequency-tunable infrared free electron laser. T ... [Appl. Phys. Lett. 92, 091111 (2008)] published Tue Mar 4, 2008.
Read full Article »
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