The effect of doping the M-barrier in very long-wave type-II InAs/GaSb heterodiodes
Darin Hoffman, Binh-Minh Nguyen, Edward Kwei-wei Huang, Pierre-Yves Delaunay, Manijeh Razeghi et al.
A variation on the standard homodiode type-II superlattice with an M-barrier between the pi-region and the n-region is shown to suppress the dark currents. By determining the optimal doping level of the M-superlattice, dark current densities of 4.95 mA/cm and quantum efficiencies in excess of 20% h ... [Appl. Phys. Lett. 93, 031107 (2008)] published Wed Jul 23, 2008.
Read full Article »
A variation on the standard homodiode type-II superlattice with an M-barrier between the pi-region and the n-region is shown to suppress the dark currents. By determining the optimal doping level of the M-superlattice, dark current densities of 4.95 mA/cm and quantum efficiencies in excess of 20% h ... [Appl. Phys. Lett. 93, 031107 (2008)] published Wed Jul 23, 2008.
Read full Article »
Leave a Reply