The effect of the last quantum barrier on the internal quantum efficiency of InGaN-light emitting diode
Eun-Hyun Park, Jin Jang, Shalini Gupta, Ian Ferguson, Soo-Kun Jeon et al.
The effect of the last quantum barrier (LQB) on the internal quantum efficiency of GaN-light emitting diode (LED) was systematically investigated using a dual-wavelength GaN-LED design. Compared with a conventional GaN-LQB, a high indium contained InGaN-LQB efficiently reduced the unintentional Mg i ... [Appl. Phys. Lett. 93, 101112 (2008)] published Fri Sep 12, 2008.
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The effect of the last quantum barrier (LQB) on the internal quantum efficiency of GaN-light emitting diode (LED) was systematically investigated using a dual-wavelength GaN-LED design. Compared with a conventional GaN-LQB, a high indium contained InGaN-LQB efficiently reduced the unintentional Mg i ... [Appl. Phys. Lett. 93, 101112 (2008)] published Fri Sep 12, 2008.
Read full Article »
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