Thermal runaway and optical efficiency in InAs/GaAs quantum dot lasers
C. K. Chia, M. Suryana, and M. Hopkinson
In contrast to quantum well lasers, we show thermal runaway effects are prominent for quantum dot (QD) lasers emitting at 1300 nm. In addition to the surface states at the cleaved facet and the effect of strain relaxation, which can couple confined states with surface states, the exposed relaxed QDs ... [Appl. Phys. Lett. 95, 141106 (2009)] published Wed Oct 7, 2009.
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In contrast to quantum well lasers, we show thermal runaway effects are prominent for quantum dot (QD) lasers emitting at 1300 nm. In addition to the surface states at the cleaved facet and the effect of strain relaxation, which can couple confined states with surface states, the exposed relaxed QDs ... [Appl. Phys. Lett. 95, 141106 (2009)] published Wed Oct 7, 2009.
Read full Article »
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