Transistor laser with emission wavelength at 1544 nm
F. Dixon, M. Feng, N. Holonyak, Jr., Yong Huang, X. B. Zhang et al.
Data are presented demonstrating continuous wave laser operation at 185 degrees C of an InPInAlGaAsInAlAs double heterojunction bipolar transistor with strained InGaAs quantum wells incorporated in the p-type base region. The laser exhibits a peak wavelength lambda~1544 nm when biased in the forw ... [Appl. Phys. Lett. 93, 021111 (2008)] published Tue Jul 15, 2008.
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Data are presented demonstrating continuous wave laser operation at 185 degrees C of an InPInAlGaAsInAlAs double heterojunction bipolar transistor with strained InGaAs quantum wells incorporated in the p-type base region. The laser exhibits a peak wavelength lambda~1544 nm when biased in the forw ... [Appl. Phys. Lett. 93, 021111 (2008)] published Tue Jul 15, 2008.
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