Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals
A. S. M. Noor, A. Miyakawa, Y. Kawata, and M. Torizawa
The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc selenide (ZnSe) is observed deep inside the crystal. Two types of defects can be detected based on the s ... [Appl. Phys. Lett. 92, 161106 (2008)] published Tue Apr 22, 2008.
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The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc selenide (ZnSe) is observed deep inside the crystal. Two types of defects can be detected based on the s ... [Appl. Phys. Lett. 92, 161106 (2008)] published Tue Apr 22, 2008.
Read full Article »
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