Ultralow dark current Ge/Si(100) photodiodes with low thermal budget
J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri et al.
Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance ... [Appl. Phys. Lett. 94, 201106 (2009)] published Wed May 20, 2009.
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Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si(100) by low-energy plasma-enhanced chemical vapor deposition. Consideration of the energy band profiles of n-i-p and p-i-n heterostructures, and optimization of growth processes and thermal budget, allowed the performance ... [Appl. Phys. Lett. 94, 201106 (2009)] published Wed May 20, 2009.
Read full Article »
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