Ultraviolet electroluminescence from controlled arsenic-doped ZnO nanowire homojunctions
Jun-Yan Zhang, Ping-Jian Li, Hui Sun, Xin Shen, Tian-Song Deng et al.
ZnO nanowire arrays were grown on semi-insulating intrinsic GaAs substrates, and controlled arsenic-doping process was carried out to realize the n-ZnO/p-ZnO nanowire array/GaAs structures. The constructed ZnO nanowire homojunctions demonstrated a clear rectifying behavior and the turn-on voltage wa ... [Appl. Phys. Lett. 93, 021116 (2008)] published Wed Jul 16, 2008.
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ZnO nanowire arrays were grown on semi-insulating intrinsic GaAs substrates, and controlled arsenic-doping process was carried out to realize the n-ZnO/p-ZnO nanowire array/GaAs structures. The constructed ZnO nanowire homojunctions demonstrated a clear rectifying behavior and the turn-on voltage wa ... [Appl. Phys. Lett. 93, 021116 (2008)] published Wed Jul 16, 2008.
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