Upconversion electroluminescence in InAs quantum dot light-emitting diodes
A. Baumgartner, A. Chaggar, A. Patane, L. Eaves, and M. Henini
We investigate the low-temperature upconversion electroluminescence (UCEL) in GaAs p-i-n diodes with a layer of self-assembled InAs quantum dots (QDs) in the intrinsic region (i). Injection of carriers into the QD states at an applied bias well below the flatband condition results in near-band-edge ... [Appl. Phys. Lett. 92, 091121 (2008)] published Fri Mar 7, 2008.
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We investigate the low-temperature upconversion electroluminescence (UCEL) in GaAs p-i-n diodes with a layer of self-assembled InAs quantum dots (QDs) in the intrinsic region (i). Injection of carriers into the QD states at an applied bias well below the flatband condition results in near-band-edge ... [Appl. Phys. Lett. 92, 091121 (2008)] published Fri Mar 7, 2008.
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